| PART |
Description |
Maker |
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MA733TX MA367TX |
SILICON, UHF BAND, MIXER DIODE
VHF-UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SC4245 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
|
TOSHIBA
|
| ZC703B ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 1N5686B 1N5690A |
VHF-UHF BAND, 18 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 39 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5812WG-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
Renesas Electronics Corporation
|
